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MSC23V47207TD-xxBS18

Features: · 4,194,304-word x 72-bit organization· 168-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 2048cycles/ 32ms· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capabilit...

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SeekIC No. : 004427955 Detail

MSC23V47207TD-xxBS18: Features: · 4,194,304-word x 72-bit organization· 168-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-stat...

MSC23V47207TD-xxBS18 Data Sheet

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Part Number:
MSC23V47207TD-xxBS18
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· 4,194,304-word x 72-bit organization
· 168-pin Dual In-line Memory Module
· Gold tab
· Single 3.3V power supply, ±0.3V tolerance
· Input : LVTTL compatible
· Output : LVTTL compatible, 3-state
· Refresh : 2048cycles/ 32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode, read modify write capability
· Multi-bit test mode capability
· Serial Presence Detect


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -0.5 to +4.6 V
Voltage on VCC Supply Relative to VSS Vcc -0.5 to +4.6 V
Short circuit current IOS 50 mA
Power dissipation PD* 18 W
Operating temperature Topr 0 to 70 °C
Storage temperature Tstg - 40 to 125 °C

*: Ta=25°C




Description

The MSC23V47207TD-xxBS18 is a 4,194,304-word x 72-bit CMOS dynamic random access memory module which is composed of eighteen 16Mb(4Mx4) DRAMs in TSOP packages mounted with eighteen decoupling capacitors. This is an 168-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.




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