MSC23V46407TD-50BS16

Here are some descriptions of the MSC23V46407TD-50BS16. The MSC23V46407TD-50BS16 is a 4,194,304-word x 72-bit CMOS dynamic random access memory module which is composed of nine 16Mb(4Mx4) DRAMs in TSOP packages mounted with nine decoupling capacitors. This is an 168-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.

Here are some features of the MSC23V46407TD-50BS16. The MSC23V46407TD-50BS16 has 4,194,304-word x 72-bit organization, 168-pin Dual In-line Memory Module ,gold tab, single 3.3V power supply and ±0.3V tolerance. The input of MSC23V46407TD-50BS16 is LVTTL compatible and the output of the MSC23V46407TD-50BS16 is LVTTL compatible, 3-state, refresh is 2048cycles/ 32ms and the /CAS before /RAS refresh is hidden refresh, /RAS only refresh is capability. The fast page mode with EDO is read modify write capability and multi-bit test mode capability. Finally, the MSC23V46407TD-50BS16 has Serial Presence Detect.

Here are some ratings of MSC23V46407TD-50BS16. Firstly the maximum of access time is made up of 4 parts, tRAC is 50ns, tAA is 25ns, tCAC is 13ns and tOEA is 13ns. Secondly, the minimum of cycle time is 90ns. Finally, the maximum of power dissipation is made up of 2 parts, the operating is 5760 mW, the standby is 28.8 mW.

Here are some absolute maximum ratings of MSC23V46407TD-50BS16. The voltage on any pin relative to VSS is -0.5 to 4.6 V, the voltage on VCC supply relative to VSS is -0.5 to 4.6 V, short circuit output current is 50 mA, the power dissipation is 9 W, the operating temperature is 0 to 70 °C, the storage temperature is -40 to 125 °C. In a test mode read cycle, the value of access time parameters is delayed for 5ns for the specified value. These parameters should be specified in test mode cycle by adding the above value to the specified value in this data sheet.