Features: · 4,194,304-word x 32-bit organization· 100-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 2048cycles/32ms· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability...
MSC23V43257D-xxBS8: Features: · 4,194,304-word x 32-bit organization· 100-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-stat...
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Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 30 Vdc Col...
Parameter | Symbol | Rating | Unit |
Voltage on Any Pin Relative to VSS | VIN, VOUT | -0.5 to 4.6 | V |
Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 4.6 | V |
Short Circuit Output Current | IOS | 50 | mA |
Power Dissipation | PD * | 8 | W |
Operating Temperature | TOPR | 0 to 70 | |
Storage Temperature | TSTG | -40 to 125 |
The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is composed of eight 16Mb(4Mx4) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an 100-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.