MSC23V43257D-xxBS8

Features: · 4,194,304-word x 32-bit organization· 100-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 2048cycles/32ms· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability...

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SeekIC No. : 004427949 Detail

MSC23V43257D-xxBS8: Features: · 4,194,304-word x 32-bit organization· 100-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-stat...

floor Price/Ceiling Price

Part Number:
MSC23V43257D-xxBS8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· 4,194,304-word x 32-bit organization
· 100-pin Dual In-line Memory Module
· Gold tab
· Single 3.3V power supply, ±0.3V tolerance
· Input : LVTTL compatible
· Output : LVTTL compatible, 3-state
· Refresh : 2048cycles/32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode with EDO, read modify write capability
· Multi-bit test mode capability
· Serial Presence Detect



Specifications

Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to 4.6 V
Voltage on VCC Supply Relative to VSS VCC -0.5 to 4.6 V
Short Circuit Output Current IOS 50 mA
Power Dissipation PD * 8 W
Operating Temperature TOPR 0 to 70
Storage Temperature TSTG -40 to 125



Description

The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is composed of eight 16Mb(4Mx4) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an 100-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.




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