Features: · 2,097,152-word x 72-bit organization· 168-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 2048cycles/ 32ms· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capabilit...
MSC23V27207TD-xxBS9: Features: · 2,097,152-word x 72-bit organization· 168-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-stat...
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Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 30 Vdc Col...
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to +4.6 | V |
Voltage on VCC Supply Relative to VSS | Vcc | -0.5 to +4.6 | V |
Short circuit current | IOS | 50 | mA |
Power dissipation | PD* | 9 | W |
Operating temperature | Topr | 0 to 70 | °C |
Storage temperature | Tstg | - 40 to 125 | °C |
*: Ta=25°C
The MSC23V27207TD-xxBS9 is a 2,097,152-word x 72-bit CMOS dynamic random access memory module which is composed of nine 16Mb(2Mx8) DRAMs in TSOP packages mounted with nine decoupling capacitors. This is an 168-pin dual in-line memory module. This module MSC23V27207TD-xxBS9 supports any application where high density and large capacity of storage memory are required.