Features: · 2,097,152-word x 64-bit organization· 168-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 1024cycles/ 16ms· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capabilit...
MSC23V26468TD-60BS8: Features: · 2,097,152-word x 64-bit organization· 168-pin Dual In-line Memory Module· Gold tab· Single 3.3V power supply, ±0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-stat...
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Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 30 Vdc Col...
Parameter |
Symbol |
Ratings |
Unit |
Voltage on Any Pin Relative to VSS |
VIN,VOUT |
-0.5 to 4.6 |
V |
Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 4.6 |
V |
Short Circuit Output Current |
IOS |
50 |
mA |
Power Dissipation |
PD * |
8 |
W |
Operating Temperature |
Topr |
0 to 70 |
°C |
Storage Temperature |
Tstg |
-40 to 125 |
°C |
The MSC23V26468TD-xxBS8 is a 2,097,152-word x 64-bit CMOS dynamic random access memory module which is composed of eight 16Mb(1Mx16) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an 168-pin dual in-line memory module. This module MSC23V26468TD-60BS8 supports any application where high density and large capacity of storage memory are required.