Features: · 4,194,304-word x 32-bit organization· 72-pin Small Outline Dual In-line Memory module - MSC23CV43257D-xxBS8 : Gold tab· Single +3.3V supply ± 0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 2048cycles/32ms· /CAS before /RAS refresh, hidden refres...
MSC23CV43257D-xxBS8: Features: · 4,194,304-word x 32-bit organization· 72-pin Small Outline Dual In-line Memory module - MSC23CV43257D-xxBS8 : Gold tab· Single +3.3V supply ± 0.3V tolerance· Input : LVTTL compatible· Ou...
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Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 30 Vdc Col...
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to +4.6 | V |
Voltage on VCC Supply Relative to VSS | Vcc | -0.5 to +4.6 | V |
Short circuit current | IOS | 50 | mA |
Power dissipation | PD* | 8 | W |
Operating temperature | Topr | 0 to 70 | °C |
Storage temperature | Tstg | - 40 to 125 | °C |
*: Ta=25°C
The MSC23CV43257D-xxBS8 is a fully decoded, 4,194,304-word x 32-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs (4Mx4) in TSOP packages mounted with eight decoupling capacitors on a 72-pin glass epoxy small outline package. This module supports any application where high density and large capacity of storage memory are required.