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MSC23CV23257D-xxBS4

Features: · 2,097,152-word x 32-bit organization· 72-pin Small Outline Dual In-line Memory module MSC23CV23257D-xxBS4 : Gold tab· Single +3.3V supply ± 0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 2048cycles/32ms· /CAS before /RAS refresh, hidden refresh,...

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SeekIC No. : 004427924 Detail

MSC23CV23257D-xxBS4: Features: · 2,097,152-word x 32-bit organization· 72-pin Small Outline Dual In-line Memory module MSC23CV23257D-xxBS4 : Gold tab· Single +3.3V supply ± 0.3V tolerance· Input : LVTTL compatible· Outp...

MSC23CV23257D-xxBS4 Data Sheet

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Part Number:
MSC23CV23257D-xxBS4
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· 2,097,152-word x 32-bit organization
· 72-pin Small Outline Dual In-line Memory module MSC23CV23257D-xxBS4 : Gold tab
· Single +3.3V supply ± 0.3V tolerance
· Input : LVTTL compatible
· Output : LVTTL compatible, 3-state
· Refresh : 2048cycles/32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode with EDO capability
· Multi-bit test mode capability




Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -1.0 to +7.0 V
Voltage on VCC Supply Relative to VSS Vcc -1.0 to +7.0 V
Short circuit current IOS 50 mA
Power dissipation PD* 4 W
Operating temperature Topr 0 to 70 °C
Storage temperature Tstg - 40 to 125 °C

*: Ta=25°C




Description

The MSC23CV23257D-xxBS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs (2Mx8) in TSOP packages mounted with four decoupling capacitors on a 72-pin glass epoxy small outline package. This module supports any application where high density and large capacity of storage memory are required.




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