Features: · 2,097,152-word x 32-bit organization· 72-pin Small Outline Dual In-line Memory module MSC23CV23218D-xxBS4 : Gold tab· Single +3.3V supply ± 0.3V tolerance· Input : LVTTL compatible· Output : LVTTL compatible, 3-state· Refresh : 1024cycles/16ms· /CAS before /RAS refresh, hidden refresh,...
MSC23CV23218D-xxBS4: Features: · 2,097,152-word x 32-bit organization· 72-pin Small Outline Dual In-line Memory module MSC23CV23218D-xxBS4 : Gold tab· Single +3.3V supply ± 0.3V tolerance· Input : LVTTL compatible· Outp...
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Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 30 Vdc Col...
· 2,097,152-word x 32-bit organization
· 72-pin Small Outline Dual In-line Memory module MSC23CV23218D-xxBS4 : Gold tab
· Single +3.3V supply ± 0.3V tolerance
· Input : LVTTL compatible
· Output : LVTTL compatible, 3-state
· Refresh : 1024cycles/16ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode capability
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN,VOUT | -1.0 to +7.0 | V |
Voltage on VCC Supply Relative to VSS | Vcc | -1.0 to +7.0 | V |
Short circuit current | IOS | 50 | mA |
Power dissipation | PD* | 4 | W |
Operating temperature | Topr | 0 to 70 | °C |
Storage temperature | Tstg | - 40 to 125 | °C |
*: Ta=25°C
The MSC23CV23218D-xxBS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs (1Mx16) in TSOP packages mounted with eight decoupling capacitors on a 72-pin glass epoxy small outline package. This module MSC23CV23218D-xxBS4 supports any application where high density and large capacity of storage memory are required.