MSC23B236D-xxBS8

Features:

· 2,097,152-word x 36-bit organization
· 72-pin Single Inline Memory Module
            MSC23B236D-xxBS8 : Gold tab
            MSC23B236D-xxDS8 : Solder tab
· Single +5V supply ± 10% tolerance
· Input : TTL compatible
· Output : TTL compatible, 3-state
· Refresh : 1024cycles/16ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode capability


Specifications

Parameter	Symbol	Rating	Unit
Voltage on Any Pin Relative to VSS	VIN, VOUT	-1.0 to +7.0	V
Voltage on VCC Supply Relative to VSS	VCC	-1.0 to +7.0	V
Short Circuit Output Current	IOS	50	mA
Power Dissipation	PD*	8	W
Operating Temperature	TOPR	0 to +70
Storage Temperature	TSTG	-40 to +125

Description

The MSC23B236D-xxBS8/DS8 is a fully decoded, 2,097,152-word x 36-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages and four 2Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a 72-pin glass epoxy single-inline package. This module supports any application where high density and large capacity of storage memory are required.