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MSC23B236A-xxBS8

Features: • 2,097,152-word ¥ 36-bit (Parity) organization• 72-pin SIMM MSC23B236A-xxBS8 : Gold tab MSC23B236A-xxDS8 : Solder tab• Single 5 V supply ±10% tolerance• Input : TTL compatible• Output : TTL compatible, 3-state, nonlatch• Refresh : 1024 cycles/16 m...

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SeekIC No. : 004427917 Detail

MSC23B236A-xxBS8: Features: • 2,097,152-word ¥ 36-bit (Parity) organization• 72-pin SIMM MSC23B236A-xxBS8 : Gold tab MSC23B236A-xxDS8 : Solder tab• Single 5 V supply ±10% tolerance• Input ...

MSC23B236A-xxBS8 Data Sheet

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Part Number:
MSC23B236A-xxBS8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 2,097,152-word ¥ 36-bit (Parity) organization
• 72-pin SIMM
   MSC23B236A-xxBS8 : Gold tab
   MSC23B236A-xxDS8 : Solder tab
• Single 5 V supply ±10% tolerance
• Input : TTL compatible
• Output : TTL compatible, 3-state, nonlatch
• Refresh : 1024 cycles/16 ms
• CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability
• Fast Page Mode capability


Specifications

Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT 1.0 to 7.0 V
Voltage on VCC Supply Relative to VSS VCC 1.0 to 7.0 V
Short Circuit Output Current IOS 50 mA
Power Dissipation PD 9.2 W
Operating Temperature TOPR 0 to 70
Storage Temperature TSTG -40 to 125

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The Oki MSC23B236A-xxBS8/DS8 is a fully decoded 2,097,152-word ¥ 36-bit CMOS dynamic random access memory composed of four 16-Mb (1M ¥ 16) DRAMs in SOJ and four 2-Mb (1M ¥ 2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72- pin glass epoxy SIMM Package supports any application where high density and large capacity of storage memory are required.




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