MSC23436D-xxBS10

Features:

· 4,194,304-word x 36-bit organization
· 72-pin Single In-Line Memory Module
         MSC23436D-xxBS10 : Gold tab
         MSC23436D-xxDS10 : Solder tab
· Single +5V supply ± 10% tolerance
· Input : TTL compatible
· Output : TTL compatible, 3-state
· Refresh : 2048cycles/32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode capability
· Multi-bit test mode capability


Specifications

Parameter	Symbol	Rating	Unit
Voltage on Any Pin Relative to VSS	VIN, VOUT	-1.0 to +7.0	V
Voltage on VCC Supply Relative to VSS	VCC	-1.0 to +7.0	V
Short Circuit Output Current	IOS	50	mA
Power Dissipation	PD*	10	W
Operating Temperature	TOPR	0 to +70
Storage Temperature	TSTG	-40 to +125

Description

The MSC23436D-xxBS10/DS10 is a fully decoded, 4,194,304-word x 36-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs (4Mx4) in SOJ packages and two 8Mb DRAMs (4Mx2) in SOJ packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single in-line package. This module supports any application where high density and large capacity of storage memory are required.