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MSC2343657D-xxDS10

Features: · 4,194,304-word x 36-bit organization· 72-pin Single In-Line Memory Module - MSC2343657D-xxBS10 : Gold tab - MSC2343657D-xxDS10 : Solder tab· Single +5V supply ± 10% tolerance· Input : TTL compatible· Output : TTL compatible, 3-state· Refresh : 2048cycles/32ms· /CAS before /RAS refresh,...

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SeekIC No. : 004427882 Detail

MSC2343657D-xxDS10: Features: · 4,194,304-word x 36-bit organization· 72-pin Single In-Line Memory Module - MSC2343657D-xxBS10 : Gold tab - MSC2343657D-xxDS10 : Solder tab· Single +5V supply ± 10% tolerance· Input : TT...

MSC2343657D-xxDS10 Data Sheet

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Part Number:
MSC2343657D-xxDS10
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· 4,194,304-word x 36-bit organization
· 72-pin Single In-Line Memory Module
  - MSC2343657D-xxBS10 : Gold tab
  - MSC2343657D-xxDS10 : Solder tab
· Single +5V supply ± 10% tolerance
· Input : TTL compatible
· Output : TTL compatible, 3-state
· Refresh : 2048cycles/32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode with EDO capability
· Multi-bit test mode capability


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -1.0 to +7.0 V
Voltage on VCC Supply Relative to VSS Vcc -1.0 to +7.0 V
Short circuit current IOS 50 mA
Power dissipation PD* 10 W
Operating temperature Topr 0 to 70 °C
Storage temperature Tstg - 40 to 125 °C

*: Ta=25°C




Description

The MSC2343657D-xxDS10 is a fully decoded, 4,194,304-word x 36-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs (4Mx4) in SOJ packages and two 8Mb DRAMs (4Mx2) in SOJ packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single in-line package. This module supports any application where high density and large capacity of storage memory are required.




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