MSC2343657D-xxBS10 Selling Leads, Price trend, MSC2343657D-xxBS10 DataSheet download, circuit diagram from SeekIC.com

Features: · 4,194,304-word x 36-bit organization· 72-pin Single In-Line Memory Module - MSC2343657D-xxBS10 : Gold tab - MSC2343657D-xxDS10 : Solder tab· Single +5V supply ± 10% tolerance· Input : TTL compatible· Output : TTL compatible, 3-state· Refresh : 2048cycles/32ms· /CAS before /RAS refresh,...

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SeekIC No. : 004427881 Detail

MSC2343657D-xxBS10: Features: · 4,194,304-word x 36-bit organization· 72-pin Single In-Line Memory Module - MSC2343657D-xxBS10 : Gold tab - MSC2343657D-xxDS10 : Solder tab· Single +5V supply ± 10% tolerance· Input : TT...

MSC2343657D-xxBS10 Data Sheet

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Part Number:: MSC2343657D-xxBS10
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/26

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Product Details

Description

Features:

· 4,194,304-word x 36-bit organization
· 72-pin Single In-Line Memory Module
- MSC2343657D-xxBS10 : Gold tab
- MSC2343657D-xxDS10 : Solder tab
· Single +5V supply ± 10% tolerance
· Input : TTL compatible
· Output : TTL compatible, 3-state
· Refresh : 2048cycles/32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode with EDO capability
· Multi-bit test mode capability

Specifications

Item	Symbol	Ratings	Unit
Voltage on any pin relative to V_ss	V_IN,V_OUT	-1.0 to +7.0	V
Voltage on VCC Supply Relative to VSS	V_cc	-1.0 to +7.0	V
Short circuit current	I_OS	50	mA
Power dissipation	P_D^*	10	W
Operating temperature	T_opr	0 to 70	°C
Storage temperature	T_stg	- 40 to 125	°C

*: T_a=25°C

Description

The MSC2343657D-xxBS10/DS10 is a fully decoded, 4,194,304-word x 36-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs (4Mx4) in SOJ packages and two 8Mb DRAMs (4Mx2) in SOJ packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single in-line package. This module supports any application where high density and large capacity of storage memory are required.

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MSC2343657D-xxBS10

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