DescriptionThe MSC23408C-60DSB is a kind of fully decoded 4, 194, 304-word*8-bit CMOS dynamic random access memory module composed of eight 4-Mb DRAMs (4M*1) in SOJ packages mounted with eight decoupling capacitors on a 3-pin glass epoxy single-inline package. This module is generally used for non...
MSC23408C-60DSB: DescriptionThe MSC23408C-60DSB is a kind of fully decoded 4, 194, 304-word*8-bit CMOS dynamic random access memory module composed of eight 4-Mb DRAMs (4M*1) in SOJ packages mounted with eight decou...
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Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 30 Vdc Col...
The MSC23408C-60DSB is a kind of fully decoded 4, 194, 304-word*8-bit CMOS dynamic random access memory module composed of eight 4-Mb DRAMs (4M*1) in SOJ packages mounted with eight decoupling capacitors on a 3-pin glass epoxy single-inline package. This module is generally used for non-parity memory expansion applications such as fax machines, printers and personal computers.
There are some MSC23408C-60DSB features as follows: (1)4-Meg*8-bit organization; (2)30-pin socket insertable module: solder tab; (3)single 5 V supply ±10% tolerance; (4)access times: 60 ns; (5)input: TTL compatible; (6)output: TTL compatible, 3-state; (7)refresh: 1024 cycles/16 ms (128 ms: L-version); (8)CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability; (9)multi-bit test mode capability; (10)fast page mode capability.
What comes next is about the MSC23408C-60DSB absolute maximum ratings: (1)voltage on any pin relative to VSS, VIN, VOUT: -1.0 to 7.0 V; (2)voltage VCC supply relative to VSS, VCC: -1.0 to 7.0 V; (3)short circuit output current, IOS: 50 mA; (4)power dissipation, PD: 8 W; (5)operating temperature, Topr: 0 to 70; (6)storage temperature, Tstg: -40 to 125. Then is about the recommended operating conditions: (1)power supply voltage, VCC: 4.5 V min, 5.0 V typ and 5.5 V max; (2)power supply voltage, VSS: 0 V min, 0 V typ and 0 V max; (3)input high voltage, VIH: 2.4 V min and 6.5 V max; (4)input low voltage, VIL: -1.0 V min and 0.8 V max. The last one is about the capacitance (Ta=25, f=1 MHz): (1)input capacitance (A0-A10), CIN1: 57 pF max; (2)input capacitance (RAS, CAS, WE), CIN2: 65 pF max; (3)I/O capacitance (DQ0-DQ7), CDQ: 19 pF max.