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MSC2323258A-xxBS4

Features: • 2,097,152-word ¥ 32-bit organization• 72-pin SIMM MSC2323258A-xxBS4 : Gold tab MSC2323258A-xxDS4 : Solder tab• Single 5 V supply ±10% tolerance• Input : TTL compatible• Output : TTL compatible, 3-state, nonlatch• Refresh : 1024 cycles/16 ms•...

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SeekIC No. : 004427856 Detail

MSC2323258A-xxBS4: Features: • 2,097,152-word ¥ 32-bit organization• 72-pin SIMM MSC2323258A-xxBS4 : Gold tab MSC2323258A-xxDS4 : Solder tab• Single 5 V supply ±10% tolerance• Input : TTL c...

MSC2323258A-xxBS4 Data Sheet

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Part Number:
MSC2323258A-xxBS4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 2,097,152-word ¥ 32-bit organization
• 72-pin SIMM
   MSC2323258A-xxBS4 : Gold tab
   MSC2323258A-xxDS4 : Solder tab
• Single 5 V supply ±10% tolerance
• Input : TTL compatible
• Output : TTL compatible, 3-state, nonlatch
• Refresh : 1024 cycles/16 ms
• CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability
• Fast Page Mode with EDO capability


Specifications

Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT 1.0 to 7.0 V
Voltage on VCC Supply Relative to VSS VCC 1.0 to 7.0 V
Short Circuit Output Current IOS 50 mA
Power Dissipation PD 4 W
Operating Temperature TOPR 0 to 70
Storage Temperature TSTG -40 to 125

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The Oki MSC2323258A-xxBS4/DS4 is a fully decoded 2,097,152-word ¥ 32-bit CMOS dynamic random access memory composed of two 16-Mb (1M ¥ 16) DRAMs in SOJ. The mounting of two DRAMs together with decoupling capacitors on a 72-pin glass epoxy SIMM Package supports any application where high density and large capacity of storage memory are required.




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