DescriptionThe MSC23136CL-xxBS10 is a fully decoded 1,048,576-word x 32-bit CMOS dynamic random access memory composed of eight 4-Mb (1M x 4) DRAMs in SOJ and two 2-Mb DRAMs(1M x2) in SOJ packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single-inline package.The module is ge...
MSC23136CL-xxBS10: DescriptionThe MSC23136CL-xxBS10 is a fully decoded 1,048,576-word x 32-bit CMOS dynamic random access memory composed of eight 4-Mb (1M x 4) DRAMs in SOJ and two 2-Mb DRAMs(1M x2) in SOJ packages m...
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Specifications Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 30 Vdc Col...
The MSC23136CL-xxBS10 is a fully decoded 1,048,576-word x 32-bit CMOS dynamic random access memory composed of eight 4-Mb (1M x 4) DRAMs in SOJ and two 2-Mb DRAMs(1M x2) in SOJ packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single-inline package.The module is generally used for memory expansion in parity application such as workstations.The low-power version(CL)offers reduced power consumption for mobile computing applications like laptops and palmtops.
Features of the MSC23136CL-xxBS10 are:(1)1-Meg x 32-bit organization; (2)72-pin socket insertable module; (3)single 5 V supply +/- 10% tolerance; (4)access time:60,70,80ns; (5)input: TTL compatible; (6)output: TTL compatible, 3-state; (7)refesh: 1024 cycles/16 ms(128 ms:L-version); (8)multi-bit test mode capability; (9)fast page mode capability.
The absolute maximum ratings of the MSC23136CL-xxBS10 can be summarized as:(1): voltage on any pin relative to Vss(Vin,Vout) is -1.0 V to +7.0 V; (2): voltage Vcc supply relative to Vss(Vcc) is -1.0 V to +7.0 V; (3): short circuit output current(Ios) is 50 mA; (4): power dissipation(PD) is 3 W; (5): operating temperature(Topr) is 0 to 70; (6): storage temperature(Tstg) is -40 to +125.