MS81V06160

Features: · 401,408 words× 16 bits· Fast FIFO (First-In First-Out) operation: 12 ns cycle time· Self refresh (No refresh control is required)· High speed asynchronous serial access Read/Write Cycle Time 12 ns/15 ns Access Time 9 ns/12 ns· Variable length delay bit (600 to 401,408)· Write mask func...

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MS81V06160 Picture
SeekIC No. : 004427435 Detail

MS81V06160: Features: · 401,408 words× 16 bits· Fast FIFO (First-In First-Out) operation: 12 ns cycle time· Self refresh (No refresh control is required)· High speed asynchronous serial access Read/Write Cycle ...

floor Price/Ceiling Price

Part Number:
MS81V06160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· 401,408 words × 16 bits
· Fast FIFO (First-In First-Out) operation: 12 ns cycle time
· Self refresh (No refresh control is required)
· High speed asynchronous serial access Read/Write Cycle Time 12 ns/15 ns Access Time 9 ns/12 ns
· Variable length delay bit (600 to 401,408)
· Write mask function (Output enable control)
· Cascading capability
· Single power supply: 3.3 V ± 10%
· Package:
    70-pin plastic TSOP TYPE II (TSOP II 70-P-400-0.5-K) (Product name: MS81V06160-xxTA) xx indicates speed rank.



Pinout

  Connection Diagram


Specifications

Parameter Symbol Condition Rating Unit
Power Supply Voltage VCC Ta = 25 ` 0.5 to +4.6 V
Input Output Voltage VT Ta = 25, VSS ` 0.5 to +4.6 V
Output Current IOS Ta = 25 50 mA
Power Dissipation PD Ta = 25 1 W
Operating Temperature Topr - 0 to 70
Storage Temperature Tstg - ` 55 to +150



Description

The MS81V06160 is a 6Mb FIFO (First-In First-Out) memory designed for 401,408-words ´ 16-bit high-speed asynchronous read/write operation.

The MS81V06160 is best suited for a field memory for digital TVs or LCD panels which require high-speed, large memory , and is not designed for high end use in professional graphics systems, which require long term picture storage and data storage.

The MS81V06160 is provided with independent control clocks to support asynchronous read and write operations. Different clock rates are also supported, which allow alternate data rates between write and read data streams. The first data read operation can be performed after 1600 ns + 4 cycles from read reset and the first data write operation is enabled after 1600 ns + 4 cycles from write reset. Thereafter, the high-speed read/write operation is possible every cycle time.

Additionally, a write mask function of MS81V06160 by IE pin and a read-data skipping function by OE pin implement image data processing easily.

The MS81V06160 provides high speed FIFO (First-in First-out) operation without external refreshing: MS81V06160 refreshes its DRAM storage cells automatically, so that it appears fully static to the users. Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration logic.

The MS81V06160's function is simple, and similar to a digital delay device whose delay-bit- length is easily set by reset timing. The delay length and the number of read delay clocks between write and read, is determined by externally controlled write and read reset timings.It uses a thin and small 70-pin plastic TSOP.




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