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MS2176

Features: `350 Watts @ 10Sec Pulse Width, 10% Duty Cycle`300 Watts @ 250Sec Pulse Width 10% Duty Cycle`9.5 dB Min. Gain`Refractory Gold Metallization`Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness`Infinite VSWR Capability At Specified Operating ConditionsApplication·U...

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SeekIC No. : 004427260 Detail

MS2176: Features: `350 Watts @ 10Sec Pulse Width, 10% Duty Cycle`300 Watts @ 250Sec Pulse Width 10% Duty Cycle`9.5 dB Min. Gain`Refractory Gold Metallization`Emitter Ballasting And Low Thermal Resistance Fo...

MS2176 Data Sheet

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Part Number:
MS2176
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

`350 Watts @ 10Sec Pulse Width, 10% Duty Cycle
`300 Watts @ 250Sec Pulse Width 10% Duty Cycle
`9.5 dB Min. Gain
`Refractory Gold Metallization
`Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness
`Infinite VSWR Capability At Specified Operating Conditions


Application

·UHF Pulsed Applications


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 21.6 A
PDISS Power Dissipation 875 W
TJ Junction Temperature +200
TSTG Storage Temperature -65 to +150



Description

The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400-500 MHz.




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