Position: Home  > All Categories> Integrated Circuits (ICs) > MS2176

MS2176

Features: `350 Watts @ 10Sec Pulse Width, 10% Duty Cycle`300 Watts @ 250Sec Pulse Width 10% Duty Cycle`9.5 dB Min. Gain`Refractory Gold Metallization`Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness`Infinite VSWR Capability At Specified Operating ConditionsApplication·U...

product image

MS2176 Picture
See larger image
SeekIC No. : 004427260 Detail

MS2176: Features: `350 Watts @ 10Sec Pulse Width, 10% Duty Cycle`300 Watts @ 250Sec Pulse Width 10% Duty Cycle`9.5 dB Min. Gain`Refractory Gold Metallization`Emitter Ballasting And Low Thermal Resistance Fo...

MS2176 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MS2176
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`350 Watts @ 10Sec Pulse Width, 10% Duty Cycle
`300 Watts @ 250Sec Pulse Width 10% Duty Cycle
`9.5 dB Min. Gain
`Refractory Gold Metallization
`Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness
`Infinite VSWR Capability At Specified Operating Conditions


Application

·UHF Pulsed Applications


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 21.6 A
PDISS Power Dissipation 875 W
TJ Junction Temperature +200
TSTG Storage Temperature -65 to +150



Description

The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400-500 MHz.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Line Protection, Backups
BX0023
A20B-1008-0550
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Integrated Circuits (ICs)
TA8435H
1MB12-140
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more