Features: · NPN OVERLAY GEOMETRY· CLASS A OPERATION· EXCELLENT INTERMODULATION CHARACTERISTICS· 40-880 MHz OPERATION· COMMON EMITTER CONFIGURATIONSpecifications Symbol Parameter Value Unit VCBO Collector-base Voltage (IE=0) 40 V VCER Collector-emitter Voltage (RBE...
MS1619: Features: · NPN OVERLAY GEOMETRY· CLASS A OPERATION· EXCELLENT INTERMODULATION CHARACTERISTICS· 40-880 MHz OPERATION· COMMON EMITTER CONFIGURATIONSpecifications Symbol Parameter Value ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-base Voltage (IE=0) |
40 |
V |
VCER |
Collector-emitter Voltage (RBE50 W) |
40 |
V |
VCEO |
Collector-emitter Voltage (IB=0) |
25 |
V |
VEBO |
Emitter-base Voltage (IC=0) |
3 |
V |
IC |
Device Current |
150 |
mA |
ICM |
Collector Peak Current |
300 |
mA |
PDISS |
Total Power Dissipation at Tamb25 at Tcase 125 |
0.7 1.5 |
W W |
TJ,TSTG |
Junction and Storage Temperature |
- 65 to200 |
THE MS1619 IS AN OVERLAY NPN SILICON TRANSISTOR IN A JEDEC TO-39 METAL CASE.
THE MS1619 OFFERS EXTREMELY GOOD INTERMODULATION PROPERTIES AND HIGH POWER GAIN. THE DEVICE IS PRIMARILY INTENDED FOR FINAL AND DRIVER STAGES IN CHANNEL AND BAND-AERIAL AMPLIFIERS WITH HIGH OUTPUT POWER FROM 40 TO 880 MHz.