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MS1510

Features: ·470 MHz·12.5 Volts·Efficiency 55%·Common Emitter·POUT = 38 W Min.·GP = 5.8 dB GainApplication·UHF Mobile ApplicationsPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 16 V VEBO Emitter-Base Voltage 4...

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SeekIC No. : 004427242 Detail

MS1510: Features: ·470 MHz·12.5 Volts·Efficiency 55%·Common Emitter·POUT = 38 W Min.·GP = 5.8 dB GainApplication·UHF Mobile ApplicationsPinoutSpecifications Symbol Parameter Value Unit VCBO Coll...

MS1510 Data Sheet

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Part Number:
MS1510
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·470 MHz
·12.5 Volts
·Efficiency 55%
·Common Emitter
·POUT = 38 W Min.
·GP = 5.8 dB Gain


Application

·UHF Mobile Applications


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 16 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 8.0 A
PDISS Power Dissipation 117 M
TJ Junction Temperature +200
TSTG Storage Temperature -65 to +150



Description

The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR at rated operating conditions.




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