Features: • 836 MHz• 12.5 VOLTS• POUT = 45 WATTS• GP = 4.7 dB MINIMUM• COMMON BASE CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-emitter Voltage 4.0 V VEBO Emitter-Base Voltage 18...
MS1455: Features: • 836 MHz• 12.5 VOLTS• POUT = 45 WATTS• GP = 4.7 dB MINIMUM• COMMON BASE CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collec...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 36 | V |
VCEO | Collector-emitter Voltage | 4.0 | V |
VEBO | Emitter-Base Voltage | 18 | V |
VCES | Collector-Emitter Voltage | 36 | V |
PDISS | Power Dissipation | 150 | W |
IC | Device Current | 9.0 | A |
TJ | Junction Temperature | +200 | |
TSTG | Storage Temperature | -65 to +150 |
The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability.