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MS1329

Features: • 150 MHz• 28 VOLTS• POUT = 60W• GP = 7.0 dB MINIMUM• COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collector- Base Voltage 65.0 V VCEO Collector-Emitter Voltage 35.0 V VEBO Emitter-Base Voltage 4....

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SeekIC No. : 004427212 Detail

MS1329: Features: • 150 MHz• 28 VOLTS• POUT = 60W• GP = 7.0 dB MINIMUM• COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-...

MS1329 Data Sheet

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Part Number:
MS1329
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 150 MHz
• 28 VOLTS
• POUT = 60W
• GP = 7.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector- Base Voltage 65.0 V
VCEO Collector-Emitter Voltage 35.0 V
VEBO Emitter-Base Voltage 4.0 V
PDISS Power Dissipation 75.0 W
IC Collector current 6.5 A
TJ Junction Temperature +200 °C
TSTG Storage Temperature -65 to +150 °C



Description

The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability.




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