Features: · 108 MHz· 28 VOLTS· GOLD METALLIZATION· POUT = 150 WATTS· GP = 9.2dB MINIMUM· COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 25 V VCES Collector-Emitter Voltage 60 V ...
MS1281: Features: · 108 MHz· 28 VOLTS· GOLD METALLIZATION· POUT = 150 WATTS· GP = 9.2dB MINIMUM· COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base ...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 25 | V |
VCES | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 16 | A |
PD | Power Dissipation | 230 | W |
Tj | Junction Temperature | 200 | |
TSTG | Storage Temperature | -65 to +150 |
The MS1281 is a 28V silicon NPN planar transistor designed primarily for VHF FM broadcast transmitters. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.