Features: ·Internally frequency compensated for unity gain.·Large DC voltage gain. 100db· Wide bandwidth (unity gain) 1MHz (temperature compensated)· Wide power supply range: Single supply 3V or 32V or dual supply ±1.5V to ±16V·Very low supply current drain (700uA) - essentially independent of sup...
MRLM124A-X-RH: Features: ·Internally frequency compensated for unity gain.·Large DC voltage gain. 100db· Wide bandwidth (unity gain) 1MHz (temperature compensated)· Wide power supply range: Single supply 3V or 32V...
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Features: CONTROLLING DOCUMENT:LM108AHRQML 5962R9863702QGALM108AHRQMLV 5962R9863702VGALM108AJ-8RQM...
Features: · Output voltage adjustable from -1.2V to -37V· 0.5A output current guaranteed, -55 C to...
Features: · Output voltage adjustable from -1.2V to -37V· 1.5A output current guaranteed, -55 C to...
·Internally frequency compensated for unity gain.
·Large DC voltage gain. 100db
· Wide bandwidth (unity gain) 1MHz
(temperature compensated)
· Wide power supply range:
Single supply 3V or 32V
or dual supply ±1.5V to ±16V
·Very low supply current drain (700uA) - essentially independent of supply voltage.
· Low input baising current 45nA
(temperature compensated)
· Low input offset voltage 2mV
and offset current 5nA
· Input common-mode voltage range includes ground.
· Differential input voltage range equal to the power supply voltage.
· Large output voltage swing. 0V to V+ - 1.5V
· SMD : 5962R9950401QCA*, VCA**, QDA***, VDA****, QZA*****, VZA******
Supply Voltage V+..........32Vdc or +16Vdc
Differential Input Voltage............32Vdc
Input Voltage.......... .-0.3Vdc to +32Vdc
Input Current
(Note 4)
Vin < -0.3Vdc ..................50mA
Power Dissipation
(Note 2)
CERDIP................... 1260mW
CERPACK.......... ...... .. 700mW
CERAMIC SOIC................700mW
Output Short-Circuit to GND
(Note 3)
(One Amplifier)
V+ < 15Vdc and TA = 25 C .... ...Continuous
Operating Temperature Range.. .-55 C to +125 C
Maximum Junction Temperature........150 C
Storage Temperature Range.. ..-65 C to +150 C
Lead Temperature
Soldering, (10 seconds)...... ... .. 260 C
Thermal Resistance
ThetaJA
CERDIP, CASE C (Still Air) ....... ..103 C/W
(500LF/Min Air flow)...... ... ... 51 C/W
CERPACK, CASE D (Still Air) .... .. ..176 C/W
(500LF/Min Air flow)............ 116 C/W
CERAMIC SOIC, CASE Z (Still Air). .. .. 176 C/W
(500LF/Min Air flow)............ 116 C/W
ThetaJC
CERDIP, CASE C...............19 C/W
CERPACK, CASE D ..............18 C/W
CERAMIC SOIC, CASE Z ...........18 C/W
Package Weight
(Typical)
CERDIP .....................TDB
CERPACK ....................TDB
CERAMIC SOIC...... ..... .... 410mg
ESD Tolerance
(Note 5)....................250V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Rating indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA) /ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15Vdc, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 4: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3Vdc (at 25 C).
Note 5: Human body model, 1.5K Ohms in series with 100 pF.
The LM124A consists of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage.
Application areas include transducer amplifiers, DC gain blocks and all the conventional op amp circuits which now can be more easily implemented in single power supply systems. For example, the LM124A can be directly operated off of the standard +5Vdc power supply voltage which is used in digital systems and will easily provide the required interface electronics without requiring the additional +15Vdc power supplies.