MRFP8P05

Features: • 8A, 50V• rDS(ON) = 0.300W• UIS SOA Rating Curve• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Related LiteratureTB334 Guidelines for Soldering Surface Mount Compone...

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SeekIC No. : 004427155 Detail

MRFP8P05: Features: • 8A, 50V• rDS(ON) = 0.300W• UIS SOA Rating Curve• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics•...

floor Price/Ceiling Price

Part Number:
MRFP8P05
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 8A, 50V
• rDS(ON) = 0.300W
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

  RFD8P05,
RFD8P05SM, RFP8P05
UNITS
Drain to Source Voltage (Note 1) VDSS -50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -50 V
Continuous Drain Current ID15 -8 A
Pulsed Drain Current (Note 3) IDM Refer to UIS Curve A
Gate to Source Voltage VGS ±20 V

Power Dissipation PD
25oC
80 W
Pulsed Avalanche Rating EAS Figures 6, 16, 17
Derate above 25oC 0.27 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Maximum Lead Temperature for Soldering TL
(0.063in (1.6mm) from case for 10s)
300 o C



Description

These N-Channel power MOSFETs MRFP8P05 are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046




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