Transistors RF MOSFET Power HV8 900MHz 58W OM780-2
MRF8S9200NR3: Transistors RF MOSFET Power HV8 900MHz 58W OM780-2
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 920 MHz to 960 MHz | Gain : | 19.5 dB at 960 MHz | ||
Output Power : | 58 W | Drain-Source Breakdown Voltage : | 70 V | ||
Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | OM-780-2 | Packaging : | Reel |