Transistors RF MOSFET Power HV8 2.6GHZ 27W NI780S
MRF8S26120HSR3: Transistors RF MOSFET Power HV8 2.6GHZ 27W NI780S
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 2.62 GHz to 2.69 GHz | Gain : | 15.6 dB |
Output Power : | 28 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 900 mA | Gate-Source Breakdown Voltage : | 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-780S |
Packaging : | Reel |