Transistors RF MOSFET Power HV8 1.8GHZ 120W NI780HS
MRF8S18120HSR3: Transistors RF MOSFET Power HV8 1.8GHZ 120W NI780HS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1.8 GHz to 1.885 GHz | Gain : | 18.6 dB at 1.84 GHz | ||
Output Power : | 72 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-780 | Packaging : | Reel |