Transistors RF MOSFET Power HV7 2GHZ 40W NI780HS-4
MRF7P20040HSR5: Transistors RF MOSFET Power HV7 2GHZ 40W NI780HS-4
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1.8 GHz to 2.2 GHz | Gain : | 18.2 dB |
Output Power : | 10 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 150 mA | Gate-Source Breakdown Voltage : | 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-780S-4 |
Packaging : | Reel |