Transistors RF MOSFET Power VHV6 450MHZ1000W NI1230S
MRF6VP41KHSR7: Transistors RF MOSFET Power VHV6 450MHZ1000W NI1230S
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Configuration : | Dual | Transistor Polarity : | N-Channel | ||
Frequency : | 500 MHz | Gain : | 20 dB | ||
Output Power : | 200 W | Drain-Source Breakdown Voltage : | 110 V | ||
Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-1230S-5 | Packaging : | Reel |