Transistors RF MOSFET Power VHV6 450MHZ1000W NI1230S
MRF6VP41KHSR5: Transistors RF MOSFET Power VHV6 450MHZ1000W NI1230S
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Configuration : | Dual Common Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 110 V | Gate-Source Breakdown Voltage : | - 6 V, 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-1230S |
Packaging : | Reel |