Transistors RF MOSFET Power VHV6 860MHz 90W TO 272WB4
MRF6V3090NBR5: Transistors RF MOSFET Power VHV6 860MHz 90W TO 272WB4
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 0.47 GHz to 0.86 GHz | Gain : | 22 dB | ||
Output Power : | 18 W | Drain-Source Breakdown Voltage : | 115 V | ||
Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-270-4 WB | Packaging : | Reel |