Transistors RF MOSFET Power VHV6 300W Latrl N-Ch SE Broadband MOSFET
MRF6V2300NBR5: Transistors RF MOSFET Power VHV6 300W Latrl N-Ch SE Broadband MOSFET
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| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Frequency : | 600 MHz | Gain : | 25.5 dB | ||
| Output Power : | 300 W | Drain-Source Breakdown Voltage : | 110 V | ||
| Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-272-4 WB EP | Packaging : | Reel |
| Technical/Catalog Information | MRF6V2300NBR5 |
| Vendor | Freescale Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 50V |
| Current Rating | 900mA |
| Package / Case | TO-272-4 |
| Packaging | Cut Tape (CT) |
| Drawing Number | 375; 1484-04; NBR; 4 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6V2300NBR5 MRF6V2300NBR5 MRF6V2300NBR5CT ND MRF6V2300NBR5CTND MRF6V2300NBR5CT |