Transistors RF MOSFET Power VHV6 300W TO272WB4N
MRF6V2300NBR1: Transistors RF MOSFET Power VHV6 300W TO272WB4N
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| Configuration : | Single Dual Drain Dual Gate | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 110 V | Gate-Source Breakdown Voltage : | - 0.5 V, 10 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-272 WB EP |
| Packaging : | Reel |
| Technical/Catalog Information | MRF6V2300NBR1 |
| Vendor | Freescale Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 50V |
| Current Rating | 2.5mA |
| Package / Case | TO-272-4 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 375; 1484-04; NBR; 4 |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MRF6V2300NBR1 MRF6V2300NBR1 |