Transistors RF MOSFET Power VHV6 10W PULSE PLD1.5
MRF6V10010NR4: Transistors RF MOSFET Power VHV6 10W PULSE PLD1.5
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Configuration : | Single Dual Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 100 V | Gate-Source Breakdown Voltage : | - 6 V, 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | PLD-1.5 |
Packaging : | Reel |
Technical/Catalog Information | MRF6V10010NR4 |
Vendor | Freescale Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 50V |
Current Rating | 10mA |
Package / Case | PLD-1.5 |
Packaging | Digi-Reel? |
Drawing Number | 375; 466-03 ; NR; 4 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF6V10010NR4 MRF6V10010NR4 MRF6V10010NR4DKR ND MRF6V10010NR4DKRND MRF6V10010NR4DKR |