Transistors RF MOSFET Power HV6 2700MHZ WCDMA NI780S
MRF6S27050HSR3: Transistors RF MOSFET Power HV6 2700MHZ WCDMA NI780S
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-780S |
Packaging : | Reel |