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MRF6S21140HSR5

Transistors RF MOSFET Power HV6 LDMOS 30W NI880HS

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SeekIC No. : 00220468 Detail

MRF6S21140HSR5: Transistors RF MOSFET Power HV6 LDMOS 30W NI880HS

MRF6S21140HSR5 Data Sheet

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Part Number:
MRF6S21140HSR5
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 68 V Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Maximum Operating Temperature : + 150 C Package / Case : NI-880S
Packaging : Reel    

Description

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Drain-Source Breakdown Voltage : 68 V
Package / Case : NI-880S


Parameters:

Technical/Catalog InformationMRF6S21140HSR5
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-880S
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation30.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S21140HSR5
MRF6S21140HSR5



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