Transistors RF MOSFET Power HV6 LDMOS 30W NI880H
MRF6S21140HR5: Transistors RF MOSFET Power HV6 LDMOS 30W NI880H
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-880 |
Packaging : | Reel |
Technical/Catalog Information | MRF6S21140HR5 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | NI-880 |
FET Type | N-Channel |
Typical RF Application | CDMA |
Typical RF Application | TDMA |
Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
Power Dissipation | 30.000 W [Max] |
Packaging | Tape & Reel, 13" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF6S21140HR5 MRF6S21140HR5 |