Transistors RF MOSFET Power HV6 2.3GHZ 40W
MRF6P23190HR5: Transistors RF MOSFET Power HV6 2.3GHZ 40W
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Configuration : | Dual | Transistor Polarity : | N-Channel | ||
Frequency : | 2.3 GHz to 2.4 GHz | Gain : | 14 dB | ||
Output Power : | 40 W | Drain-Source Breakdown Voltage : | 68 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-1230-5 | Packaging : | Reel |
Technical/Catalog Information | MRF6P23190HR5 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | NI-1230 |
FET Type | N-Channel |
Typical RF Application | WLL |
Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
Power Dissipation | 40.000 W [Max] |
Packaging | Tape & Reel, 13" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF6P23190HR5 MRF6P23190HR5 |