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MRF6P23190HR5

Transistors RF MOSFET Power HV6 2.3GHZ 40W

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SeekIC No. : 00220473 Detail

MRF6P23190HR5: Transistors RF MOSFET Power HV6 2.3GHZ 40W

MRF6P23190HR5 Data Sheet

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Part Number:
MRF6P23190HR5
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 2.3 GHz to 2.4 GHz Gain : 14 dB
Output Power : 40 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-1230-5 Packaging : Reel    

Description

Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Drain-Source Breakdown Voltage : 68 V
Gain : 14 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Output Power : 40 W
Package / Case : NI-1230-5
Frequency : 2.3 GHz to 2.4 GHz


Parameters:

Technical/Catalog InformationMRF6P23190HR5
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-1230
FET TypeN-Channel
Typical RF ApplicationWLL
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation40.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6P23190HR5
MRF6P23190HR5



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