Transistors RF MOSFET Power HV5 900MHZ 150W NI780HS
MRF5S9150HSR3: Transistors RF MOSFET Power HV5 900MHZ 150W NI780HS
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 15 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | NI-780S |
| Packaging : | Reel |
| Technical/Catalog Information | MRF5S9150HSR3 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | NI-780 |
| FET Type | N-Channel |
| Typical RF Application | CDMA |
| Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
| Power Dissipation | 33.000 W [Max] |
| Packaging | Tape & Reel, 13" |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF5S9150HSR3 MRF5S9150HSR3 |