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MRF5S9101NR1

Transistors RF MOSFET Power 100W 900MHZ26V

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SeekIC No. : 00220675 Detail

MRF5S9101NR1: Transistors RF MOSFET Power 100W 900MHZ26V

MRF5S9101NR1 Data Sheet

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Part Number:
MRF5S9101NR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 0.86 GHz to 0.96 GHz Gain : 17.5 dB
Output Power : 100 W Drain-Source Breakdown Voltage : 68 V
Continuous Drain Current : 0.7 A Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Maximum Operating Temperature : + 150 C Package / Case : TO-270-4 WB EP
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Output Power : 100 W
Drain-Source Breakdown Voltage : 68 V
Package / Case : TO-270-4 WB EP
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Gain : 17.5 dB
Frequency : 0.86 GHz to 0.96 GHz
Continuous Drain Current : 0.7 A


Application

GSM Application
• Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)
   Power Gain - 17.5 dB
   Drain Efficiency - 60%
   GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =50 Watts Avg., Full Frequency Band (869-894  MHz and 921-960 MHz
    Power Gain - 18 dB
    Spectral Regrowth @ 400 kHz Offset = -63 dBc
    Spectral Regrowth @ 600 kHz Offset = -78 dBc
    EVM - 2.3% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,@ f = 960 MHz
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 427
2.44		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C



Parameters:

Technical/Catalog InformationMRF5S9101NR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 26V
Current Rating700mA
Package / CaseTO-270-4
PackagingTape & Reel (TR)
Drawing Number375; 1486-03; NR; 2
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF5S9101NR1
MRF5S9101NR1
MRF5S9101NR1TR ND
MRF5S9101NR1TRND
MRF5S9101NR1TR



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