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MRF5S21130HSR3

Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880

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SeekIC No. : 00220739 Detail

MRF5S21130HSR3: Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880

MRF5S21130HSR3 Data Sheet

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Part Number:
MRF5S21130HSR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.11 GHz to 2.17 GHz Gain : 13.5 dB
Output Power : 28 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 2.1 A Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Maximum Operating Temperature : + 150 C Package / Case : NI-880S-3
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 13.5 dB
Frequency : 2.11 GHz to 2.17 GHz
Output Power : 28 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Continuous Drain Current : 2.1 A
Package / Case : NI-880S-3


Application

• Typical 2 - carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth =3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
     Power Gain - 13.5 dB
     Efficiency - 26%
     IM3 @ 10 MHz Offset - -37 dBc @ 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset- -39 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40 Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 372
2.13		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 92 W



Parameters:

Technical/Catalog InformationMRF5S21130HSR3
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-880S
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation28.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF5S21130HSR3
MRF5S21130HSR3



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