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MRF5S19130HR3

Transistors RF MOSFET Power HV5 28V 26W WCDMA NI880H

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SeekIC No. : 00220342 Detail

MRF5S19130HR3: Transistors RF MOSFET Power HV5 28V 26W WCDMA NI880H

MRF5S19130HR3 Data Sheet

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Part Number:
MRF5S19130HR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.9 GHz to 2 GHz Gain : 13 dB
Output Power : 26 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-880-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 13 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Frequency : 1.9 GHz to 2 GHz
Output Power : 26 W
Package / Case : NI-880-3


Application

• Typical 2 -Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
     Power Gain - 13 dB
     Drain Efficiency - 25%
     IM3 @ 2.5 MHz Offset - -37 dBc @ 1.2288 MHz Bandwidth
     ACPR @ 885 kHz Offset - -51 dB @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,110 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40 Nominal.
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 438
2.50		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 110 W



Parameters:

Technical/Catalog InformationMRF5S19130HR3
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-880
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Voltage Gate to Source (Vgs)3.8 V [Max]
Power Dissipation26.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF5S19130HR3
MRF5S19130HR3



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