Position: Home  > All Categories> Integrated Circuits (ICs) > MRF5S19130HR3

MRF5S19130HR3

Transistors RF MOSFET Power HV5 28V 26W WCDMA NI880H

product image

MRF5S19130HR3 Picture
See larger image
SeekIC No. : 00220342 Detail

MRF5S19130HR3: Transistors RF MOSFET Power HV5 28V 26W WCDMA NI880H

MRF5S19130HR3 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MRF5S19130HR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.9 GHz to 2 GHz Gain : 13 dB
Output Power : 26 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-880-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 13 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Frequency : 1.9 GHz to 2 GHz
Output Power : 26 W
Package / Case : NI-880-3


Application

• Typical 2 -Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
     Power Gain - 13 dB
     Drain Efficiency - 25%
     IM3 @ 2.5 MHz Offset - -37 dBc @ 1.2288 MHz Bandwidth
     ACPR @ 885 kHz Offset - -51 dB @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,110 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40 Nominal.
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 438
2.50		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 110 W



Parameters:

Technical/Catalog InformationMRF5S19130HR3
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-880
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Voltage Gate to Source (Vgs)3.8 V [Max]
Power Dissipation26.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF5S19130HR3
MRF5S19130HR3



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Tools
TCP202
G084SN05 V.3
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
View more