MRF5S19130H-1

The MRF5S19130H-1 is N-Channel Enhancement -Mode Lateral MOSFET. It is designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

The features of MRF5S19130H-1 can be summarized as:(1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 V Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Low Gold Plating Thickness on Leads, 40 Nominal; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

The absolute maximum ratings of MRF5S19130H-1 are:(1)Drain-Source Voltage:-0.5V to +65V; (2)Gate-Source Voltage:-0.5V to +15V; (3)Total Device Dissipation @ TC = 25°C:438W, Derate above 25°C..2.50W/°C; (4)Storage Temperature Range:- 65°C to +150 °C; (5)Case Operating Temperature:150 °C; (6)Operating Junction Temperature:200 °C; (7)CW Operation @ TC = 25°C:160W, Derate above 25°C..1W/°C.

The electrical characteristics of the MRF5S19130H-1 are:(1)Zero Gate Voltage Drain Leakage Current(VDS = 65V, VGS = 0V):10uA; (2)Zero Gate Voltage Drain Leakage Current(VDS = 28V, VGS = 0V):1uA; (3)Gate-Source Leakage Current(VGS = 5V, VDS = 0V):1uA; (4)Gate Threshold Voltage(VDS = 10V, ID = 200A):2.5V to 3.5V; (5)Gate Quiescent Voltage(VDD = 28V, ID = 1200mA, Measured in Functional Test):3.8V; (6)Drain-Source On-Voltage(VGS = 10V, ID = 3A):0.26V; (7)Reverse Transfer Capacitance(VDS = 28V ± 30 mV(rms)ac @ 1 MHz, VGS = 0V):2.7pF.

If you want to know more information such as the electrical characteristics about the MRF5S19130H-1, please download the datasheet in www.seekic.com or www.chinaicmart.com .