Transistors RF MOSFET Power 1990MHZ 60W 28V TO272WB4N
MRF5S19060NBR1: Transistors RF MOSFET Power 1990MHZ 60W 28V TO272WB4N
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1.93 GHz to 1.99 GHz | Gain : | 14 dB | ||
Output Power : | 12 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-272-4 WB EP | Packaging : | Reel |
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -0.5, +65 | Vdc |
Gate-Source Voltage | VGS | -0.5, +15 | Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 218.8 1.25 |
W W/°C |
Storage Temperature Range | Tstg | - 65 to +175 | °C |
Operating Junction Temperature | TJ | 200 | °C |
Technical/Catalog Information | MRF5S19060NBR1 |
Vendor | Freescale Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 750mA |
Package / Case | TO-272-4 |
Packaging | Cut Tape (CT) |
Drawing Number | 375; 1484-04; NBR; 4 |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MRF5S19060NBR1 MRF5S19060NBR1 MRF5S19060NBR1CT ND MRF5S19060NBR1CTND MRF5S19060NBR1CT |