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SeekIC No. : 003434897 Detail

MRF5P20180HR6: MOSFET RF N-CHAN 28V 38W NI-1230

MRF5P20180HR6 Data Sheet

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Part Number:: MRF5P20180HR6
Mfg:
Supply Ability:: 5000

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Upload time: 2024/11/14

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Product Details

Quick Details

Series:	-	Continuous Collector Current :	5 mA
Manufacturer:	Freescale Semiconductor	Transistor Type:	LDMOS
Frequency:	1.93GHz	Gain:	14dB
Voltage - Test:	28V	Current Rating:	10µA
Noise Figure:	-	Current - Test:	1.6A
Power - Output:	38W	Voltage - Rated:	65V
Package / Case:	NI-1230	Supplier Device Package:	NI-1230

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 28V
Gain: 14dB
Voltage - Rated: 65V
Current - Test: 1.6A
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Package / Case: NI-1230
Supplier Device Package: NI-1230
Frequency: 1.93GHz
Power - Output: 38W

Application

• Typical 2- carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ = 2 x 800 mA, P_out= 38 Watts Avg., Full Frequency Band, Channel Bandwidth =3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.Power Gain - 14 d
     Drain Efficiency - 26%
      IM3 @ 10 MHz Offset - -37.5 dBc @ 3.84 MHz Channel Bandwittdth
       ACPR @ 5 MHz Offset - -41 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40 Nominal.
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	-0.5, +65	Vdc
Gate-Source Voltage	V_GS	-0.5, +15	Vdc
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	530 3.0	W W/°C
Storage Temperature Range	T_stg	- 65 to +150	°C
Operating Junction Temperature	T_J	200	°C
CW Operation	CW	120	W

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MRF5P20180HR6

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