MRF581G

TRANS NPN 18V 200MA MACRO X

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SeekIC No. : 003435060 Detail

MRF581G: TRANS NPN 18V 200MA MACRO X

floor Price/Ceiling Price

Part Number:
MRF581G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz Package / Case : US-6
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB
Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)    

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Frequency - Transition: 5GHz
Packaging: Bulk
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
Manufacturer: Microsemi Power Products Group
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz


Parameters:

Technical/Catalog InformationMRF581G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)3dB ~ 3.5dB @ 500MHz
Current - Collector (Ic) (Max)200mA
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 50mA, 5V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain13dB ~ 15.5dB
Power - Max2.5W
Compression Point (P1dB)-
Package / Case*
Packaging*
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF581G
MRF581G
MRF581GMI ND
MRF581GMIND
MRF581GMI



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