MRF5211LT1 Selling Leads, Price trend, MRF5211LT1 DataSheet download, circuit diagram from SeekIC.com

Features: * High Current GainBandwidth Product --fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1)-fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1)* Low Noise Figure @ f = 1.0 GHz --NF = 2.5 dB (Typ) (MMBR521LT1)(matched)-NF = 2.8 dB (Typ) (MRF5211LT1)(matched)* High Power Gain - Gpe (matched) = 11 dB ...

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SeekIC No. : 004426998 Detail

MRF5211LT1: Features: * High Current GainBandwidth Product --fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1)-fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1)* Low Noise Figure @ f = 1.0 GHz --NF = 2.5 dB (Typ) (MM...

MRF5211LT1 Data Sheet

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Part Number:: MRF5211LT1
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/12

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Product Details

Description

Features:

* High Current GainBandwidth Product -
-f_T = 3.4 GHz (Typ) @ I_C = 35 mAdc (MMBR521LT1)
-f_T = 4.2 GHz (Typ) @ I _C= 50 mAdc (MRF5211LT1)
* Low Noise Figure @ f = 1.0 GHz -
-NF = 2.5 dB (Typ) (MMBR521LT1)(matched)
-NF = 2.8 dB (Typ) (MRF5211LT1)(matched)
* High Power Gain - Gpe (matched) = 11 dB (Typ)
* Guaranteed RF Parameters
* Surface Mounted SOT23 (MMBR521LT1) & SOT143 (MRF5211LT1) Offer Improved RF Performance
-Lower Package Parasitics
-Higher Gain
* Available in tape and reel packaging options:T1 suffix = 3,000 units per reel

Specifications

Ratings	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	-10	Vdc
CollectorBase Voltage	V_CBO	-20	Vdc
EmitterBase Voltage	V_EBO	-2.5	Vdc
Power Dissipation (1) T_C= 75 °C, Derate linearly above T_C = 75 °C @ All	P_D(max)	0.333 4.44	W mW/°C
Collector Current - Continuous	I_C	70	mA
Maximum Junction Temperature	T_Jmax	150	°C
Storage Temperature All	T_stg	55 to +150	°C

Description

MRF5211LT1 is Designed primarily for use in the highgain, lownoise smallsignal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times.

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MRF5211LT1

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