Transistors RF MOSFET Power RF Transistor
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Packaging : | Tray |
The MRF492 is designed for 12.5V low band VHF large-singal power amplifier applications in commercial and industrial FM equipment. The features of MRF492 are specified 12.5 V, 50 MHz characteristics: output power=70 W (PEP), minimum gain=11 dB and efficiency=50%.
The following is about the absolute maximum ratings of MRF492: (1)collector-emitter voltage, VCEO: 18 V; (2)collector-base voltage, VCBO: 36 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 20 A; (5)total device dissipation @ TC=25, PD: 250 W and derate 1.43 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150; (7)thermal resistance, junction to case, RJC: 0.7/W.
The electrical characteristics of the MRF492 are: (1)collector-emitter breakdown voltage: 18V at IC=100mA, IB=0; (2)collector-emitter breakdown voltage: 36V at IC=50mA, VBE=0; (3)emitter-base breakdown voltage: 4.0V at IE=10mA, IC=0; (4)DC current gain: 10 min and 150 max at IC=5.0A, VCE=5.0V; (5)output capacitance: 275pF typ and 450pF max at VCB=15V, IE=0, f=1.0MHz.