Transistors RF Bipolar Power RF Transistor
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Maximum Operating Frequency : | 30 MHz | Collector- Emitter Voltage VCEO Max : | 35 V |
Emitter- Base Voltage VEBO : | 2.5 V | Continuous Collector Current : | 10 A |
Power Dissipation : | 250 W | Package / Case : | SOT-123 |
Packaging : | Tray |
The MRF464 is designed for application as a high-power linear amplifier from 1.5 to 30MHz, in single sideband mobile, marine and base station equipment. The features of MRF464 are specified 28 V, 30 MHz characteristics: output power=80 W (PEP), minimum gain=15 dB and efficiency=40%.
The following is about the absolute maximum ratings of MRF464: (1)collector-emitter voltage, VCEO: 35 V; (2)collector-base voltage, VCBO: 65 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 10 A; (5)total device dissipation @ TC=25, PD: 250 W and derate 1.4 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150; (7)thermal resistance, junction to case, RJC: 0.7/W.
The electrical characteristics of the MRF464 are: (1)collector-emitter breakdown voltage: 35V at IC=100mA, IB=0; (2)collector-emitter breakdown voltage: 65V at IC=50mA, VBE=0; (3)emitter-base breakdown voltage: 4.0V at IE=10mA, IC=0; (4)DC current gain: 10 min at IC=0.5A, VCE=5.0V; (5)output capacitance: 200pF max at VCB=28V, IE=0, f=1.0MHz.