MRF464

Transistors RF Bipolar Power RF Transistor

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MRF464 Picture
SeekIC No. : 00218257 Detail

MRF464: Transistors RF Bipolar Power RF Transistor

floor Price/Ceiling Price

US $ 26.4~39.6 / Piece | Get Latest Price
Part Number:
MRF464
Mfg:
Advanced Semiconductor, Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $39.6
  • $33
  • $29.7
  • $26.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Maximum Operating Frequency : 30 MHz Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 2.5 V Continuous Collector Current : 10 A
Power Dissipation : 250 W Package / Case : SOT-123
Packaging : Tray    

Description

Configuration :
Maximum DC Collector Current :
Collector- Emitter Voltage VCEO Max : 35 V
Packaging : Tray
Maximum Operating Frequency : 30 MHz
Power Dissipation : 250 W
Emitter- Base Voltage VEBO : 2.5 V
Package / Case : SOT-123
Continuous Collector Current : 10 A


Description

The MRF464 is designed for application as a high-power linear amplifier from 1.5 to 30MHz, in single sideband mobile, marine and base station equipment. The features of MRF464 are specified 28 V, 30 MHz characteristics: output power=80 W (PEP),  minimum gain=15 dB and efficiency=40%.

The following is about the absolute maximum ratings of MRF464: (1)collector-emitter voltage, VCEO: 35 V; (2)collector-base voltage, VCBO: 65 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 10 A; (5)total device dissipation @ TC=25, PD: 250 W and derate 1.4 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150; (7)thermal resistance, junction to case, RJC: 0.7/W.

The electrical characteristics of the MRF464 are: (1)collector-emitter breakdown voltage: 35V at IC=100mA, IB=0; (2)collector-emitter breakdown voltage: 65V at IC=50mA, VBE=0; (3)emitter-base breakdown voltage: 4.0V at IE=10mA, IC=0; (4)DC current gain: 10 min at IC=0.5A, VCE=5.0V; (5)output capacitance: 200pF max at VCB=28V, IE=0, f=1.0MHz.




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